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| APT33GF120BR 1200V 52A APT33GF120BR Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-247 * Low Forward Voltage Drop * Ultra Low Leakage Current * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 20KHz G C C E G E MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE IC1 IC2 ICM ILM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20K) Gate Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 105C Pulsed Collector Current 1 All Ratings: TC = 25C unless otherwise specified. APT33GF120BR UNIT 1200 1200 20 52 33 Amps Volts @ TC = 25C 104 66 65 297 -55 to 150 300 C RBSOA Clamped Inductive Load Current @ RG = 11 TC = 125 C Single Pule Avalanche Energy Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 2 mJ Watts STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX UNIT 1200 4.5 5.5 2.7 3.3 6.5 3.2 3.9 0.5 3-2003 052-6206 Rev D Volts Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) I CES I GES 5.0 100 mA nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS (IGBT) Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT33GF120BR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25C) VGE = 15V VCC = 0.8VCES I C = I C2 RG =10 MIN TYP MAX UNIT 1855 230 110 170 19 100 24 85 170 125 25 ns nC pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 TJ = +150C 60 210 74 2.8 2.8 5.6 ns mJ Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 TJ = +25C VCE = 20V, I C = 25A 27 65 190 70 5.2 8.5 20 mJ S ns THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RJC RJA WT Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.42 40 0.22 oz gm Package Weight 5.90 1 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, VCC = 50V, RGE = 25, L = 120H, Tj = 25C See MIL-STD-750 Method 3471 3-2003 052-6206 Rev D 2 3 APT Reserves the right to change, without notice, the specifications and information contained herein. 60 IC, COLLECTOR CURRENT (AMPERES) VGE=17, 15 & 13V 40 11V IC, COLLECTOR CURRENT (AMPERES) 12V 60 APT33GF120BR 12V VGE=17, 15 & 13V 11V 40 10V 20 9V 8V 0 7V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (TJ = 150C) 100 OPERATION 10V 20 9V 8V 7V 0 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25C) 80 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) 250Sec. Pulse Test VGE = 15V LIMITED BY VCE (SAT) 60 TC=-55C TC=+25C TC=+150C 100s 10 40 1ms TC =+25C TJ =+150C SINGLE PULSE 1 1 10 100 1200 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Forward Safe Operating Area 10ms 20 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Output Characteristics @ VGE = 15V VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 0 3,000 Cies 1,000 C, CAPACITANCE (pF) f = 1MHz 20 IC = IC2 TJ = +25C 16 VCE=240V 12 VCE=600V VCE =960V 8 Coes 100 Cres 4 10 .01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 0.5 ZJC, THERMAL IMPEDANCE (C/W) 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage 0 0 D=0.5 0.1 0.05 0.2 0.1 0.05 PDM 0.02 0.01 0.01 0.005 Note: t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC SINGLE PULSE 0.001 10 -5 10-4 10-3 10 -2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 052-6206 Rev D 3-2003 APT33GF120BR 5.0 IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS) 60 4.0 IC1 2.0 IC2 0.5 IC2 1.5 40 20 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.2 SWITCHING ENERGY LOSSES (mJ) 1.0 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9, Maximum Collector Current vs Case Temperature 16 VCC = 0.66 VCES VGE = +15V TJ = +25C IC = IC2 0 25 1.1 12 1 8 Eoff 0.9 4 Eon 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 10, Breakdown Voltage vs Junction Temperature 20 IC1 1 0.7 20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance 4 SWITCHING ENERGY LOSSES (mJ) VCC = 0.66 VCES VGE = +15V TJ = +125C RG = 10 0 0 TOTAL SWITCHING ENERGY LOSSES (mJ) 3 IC2 2 0.5 IC2 VCC = 0.66 VCES VGE = +15V RG = 10 Eoff 1 Eon 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature 100 IC, COLLECTOR CURRENT (AMPERES) 0.1 10 20 30 40 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current For Both: Duty Cycle = 50% TJ = +125C Tsink = +90C Gate drive as specified Power dissapation = 83W ILOAD = IRMS of fundamental 0 10 052-6206 Rev D 3-2003 1 0.1 1.0 10 F, FREQUENCY (KHz) Figure 14,Typical Load Current vs Frequency 100 1000 APT33GF120BR VCHARGE *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Et s = E on + E off 90% B 10% t d (on) VC 90% D.U.T. VCE (SAT) 10% tf E on t=2us E off IC t d(off) 90% A DRIVER* D.U.T. IC 100uH V CLAMP RG A VC B A VC IC 10% tr Figure 15, Switching Loss Test Circuit and Waveforms 2 VCE(off) 90% VGE(on) V CC RL = 2 .5 VCES I C2 D.U.T. 10% 1 VGE(off) t d (on) tr t d(off) tf From Gate Drive Circuitry RG VCE(on) 1 Figure 16, Resistive Switching Time Test Circuit and Waveforms T0-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Collector Emitter 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 052-6206 Rev D 3-2003 |
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